SOFT PLASMA MODE AND GUNN INSTABILITY

[1] BONCHBRUEVICH VL, 1966, P INT SCH PHYSICS EN, P331

[2] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[3] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[4] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[6] EHRENREICH H, 1966, P INT SCH PHYSICS EN, P106

[7] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91

[8] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498): : 1147 - &

[9] PYTTE E, TO BE PUBLISHED

[10] TAUC J, 1966, P INT SCH PHYSICS ED, P106

[1] BONCHBRUEVICH VL, 1966, P INT SCH PHYSICS EN, P331

[2] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[3] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[4] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[6] EHRENREICH H, 1966, P INT SCH PHYSICS EN, P106

[7] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91

[8] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498): : 1147 - &

[9] PYTTE E, TO BE PUBLISHED

[10] TAUC J, 1966, P INT SCH PHYSICS ED, P106