THE FREQUENCY-DEPENDENT IMPEDANCE OF P-I-N-DIODES

被引：25

作者：

CAVERLY, RH ^{[1
]}

HILLER, G ^{[1
]}

机构：

[1] MA COM INC,DIV MA COM SEMICOND PROD,BURLINGTON,MA 01803

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 04期

关键词：

D O I：

10.1109/22.18854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：787 / 790

页数：4

共 15 条

[1]

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[2]

BASILE PC, 1981, RCA REV, V42, P752

[3] P-I-N-DIODES FOR LOW-FREQUENCY HIGH-POWER SWITCHING APPLICATIONS [J].

CAULTON, M ;

ROSEN, A ;

STABILE, PJ ;

GOMBAR, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (06) :875-882

[4]

Caverley R. H., 1988, 1988 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.88CH2458-8), P2295, DOI 10.1109/ISCAS.1988.15403

[5]

CAVERLY R, 1987 IEEE MTTS INT M, P591

[6] DISTORTION IN P-I-N-DIODE CONTROL-CIRCUITS [J].

CAVERLY, RH ;

HILLER, G .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (05) :492-501

[7]

GARVER R, 1976, MICROWAVE DIODE CONT, P326

[8]

HILLER G, 1986, MICROWAVES RF, V25, P111

[9] SILICON PIN DIODE AS MICROWAVE RADAR PROTECTOR AT MEGAWATT LEVELS [J].

LEENOV, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (02) :53-&

[10]

NORDMAN JE, 1963, IEEE T ELECTRON DEV, VED10, P171

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