LOW-TEMPERATURE POLYCRYSTALLINE-SILICON TFT ON 7059 GLASS

[1] ABILEAH A, 1988, SID INT S DIG TECH P, V19, P420

[2] LARGE GRAIN POLYCRYSTALLINE SILICON BY LOW-TEMPERATURE ANNEALING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2260 - 2266

[3] HAWKINS WG, 1985, MATER RES SOC S P, V49, P443

[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[5] HIGH-PERFORMANCE THIN-FILM TRANSISTORS FROM OPTIMIZED POLYCRYSTALLINE SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1894 - 1896

[6] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 468 - 470

[7] STEWART RG, 1988, SID INT S, V19, P404

[1] ABILEAH A, 1988, SID INT S DIG TECH P, V19, P420

[2] LARGE GRAIN POLYCRYSTALLINE SILICON BY LOW-TEMPERATURE ANNEALING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2260 - 2266

[3] HAWKINS WG, 1985, MATER RES SOC S P, V49, P443

[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[5] HIGH-PERFORMANCE THIN-FILM TRANSISTORS FROM OPTIMIZED POLYCRYSTALLINE SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1894 - 1896

[6] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 468 - 470

[7] STEWART RG, 1988, SID INT S, V19, P404