TRANSMUTATION DOPING OF GAAS BY THERMAL-NEUTRONS

被引：18

作者：

GREENE, PD

机构：

[1] Standard Telecommunication Laboratories Limited, Harlow, Essex CM17 9NA England, London Road

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 04期

关键词：

D O I：

10.1016/0038-1098(79)90957-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical properties of GaAs have been modified by transmutation of about 1 × 1018 As atoms per cm3 to Se and 0.7 × 1018 Ga atoms per cm3 to Ge in a flux of thermal neutrons, followed by annealing at temperatures from 625 to 900°C. Enhancement of carrier concentration was not observed in n+ samples, although p and n- material showed changes in carrier concentration of the expected magnitude. © 1979.

引用

页码：325 / 326

页数：2

共 4 条

[1] MIRIANASHVILI SM, 1971, SOV PHYS SEMICOND+, V4, P1612
[2] Sealy B. J., 1976, Applications of ion beams to materials 1975, P75
[3] MAGNETO-OPTICAL STUDY OF SHALLOW DONORS IN TRANSMUTATION-DOPED GAAS
STOELINGA, JHM
LARSEN, DM
WALUKIEWICZ, W
AGGARWAL, RL
BOZLER, CO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1978, 39 (08) : 873 - 877
[4] PREPARATION OF UNIFORM RESISTIVITY N-TYPE SILICON BY NUCLEAR TRANSMUTATION
TANENBAUM, M
MILLS, AD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (02) : 171 - 176

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