SCANNING-TUNNELING-MICROSCOPY STUDY OF S ADSORPTION ON NI(111)

被引:9
作者
RUAN, L
STENSGAARD, I
BESENBACHER, F
LAEGSGAARD, E
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期
关键词
D O I
10.1116/1.587596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The chemisorption of sulfur on Ni(111) has been studied by scanning tunneling microscopy. At initial adsorption individual S atoms appear as protrusions 0.3-0.4 angstrom high, forming a local p(2X2) structure near step edges. The p(2X2) structure is found to be a simple S overlayer structure. After further H2S exposure the surface undergoes a reconstruction to a (5 square-root 3X2) structure, accompanied by a homogeneous nucleation of small islands resulting from an ejection of Ni atoms from terraces. The Ni density of 0.80+/-0.03 ML in the (5 square-root 3X2) structure has been determined by measuring the amount of Ni atoms used to build the islands.
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页码:1772 / 1775
页数:4
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