COMPARISON OF SOI AND JUNCTION ISOLATION FOR SUBSTRATE CROSSTALK SUPPRESSION IN MIXED-MODE INTEGRATED-CIRCUITS

被引:14
作者
JOARDAR, K
机构
[1] Motorola, Semiconductor Products Sector, Mesa, AZ 85202, 2200 W. Broadway
关键词
MIXED ANALOG DIGITAL INTEGRATED CIRCUITS; SILICON INSULATOR; PN JUNCTIONS; ISOLATION TECHNOLOGY; CROSSTALK;
D O I
10.1049/el:19950861
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using two-dimensional computer simulations and measurements on silicon, it is shown that whereas silicon-on-insulator (SOI) based processes provide high isolation from crosstalk in mixed mode analogue-digital integrated circuits, p/n junction isolation can provide equal or better crosstalk immunity with less expense.
引用
收藏
页码:1230 / 1231
页数:2
相关论文
共 6 条
[1]   A SIMPLE APPROACH TO MODELING CROSS-TALK IN INTEGRATED-CIRCUITS [J].
JOARDAR, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (10) :1212-1219
[2]  
MERRILL RB, 1994, P IEEE INT EL DEV M, P433
[3]  
RAHIM I, 1992, P IEEE INT SOI C, P170
[4]  
STANISIC BR, 1994, IEEE J SOLID STATE C, V28, P226
[5]   EXPERIMENTAL RESULTS AND MODELING TECHNIQUES FOR SUBSTRATE NOISE IN MIXED-SIGNAL INTEGRATED-CIRCUITS [J].
SU, DK ;
LOINAZ, MJ ;
MASUI, S ;
WOOLEY, BA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (04) :420-430
[6]  
1992, MEDICI 2 DIMENSIONAL