SPATIAL EXTENT OF LOCALIZED STATE WAVEFUNCTIONS IN SILICON INVERSION LAYERS

被引：43

作者：

PEPPER, M ^{[1
]}

POLLITT, S ^{[1
]}

ADKINS, CJ ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 15期

关键词：

D O I：

10.1088/0022-3719/7/15/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L273 / L277

页数：5

共 19 条

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[6] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

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[7]

GRANT A, IN PRESS

[8] VARIABLE RANGE HOPPING IN A NONUNIFORM DENSITY OF STATES [J].

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[9]

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[10]

Lukes T., 1972, Journal of Non-Crystalline Solids, V8-10, P470, DOI 10.1016/0022-3093(72)90178-0

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