ELECTRONIC-STRUCTURE OF YBN

被引:46
作者
DEGIORGI, L
BACSA, W
WACHTER, P
机构
[1] Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 01期
关键词
D O I
10.1103/PhysRevB.42.530
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large single crystals of cubic and stoichiometric YbN have been grown. On these crystals we measured the optical reflectivity for photon energies between 1 meV and 12 eV, also at helium temperatures, and performed a Kramers-Kronig analysis to obtain the optical constants. In addition, we measured the Raman effect to obtain further information on the phonon spectra. The electrical conductivity at room and at low temperature and the Hall effect at 300 K served to obtain also the effective mass of the carriers. Also the magnetization and initial susceptibility have been measured. The main important results are that YbN is a self-compensated semimetal with about 1020 carriers per cm-3, the occupied 4f13 state is about 6 eV below EF, the empty 4f14 state is about 0.2 eV above EF, and the effective mass of the carriers is about 2.2me. In other words the material definitely is not a heavy fermion but more probably a Kondo system. Nonstoichiometric samples tend to show stronger Kondo features. © 1990 The American Physical Society.
引用
收藏
页码:530 / 539
页数:10
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