GALLIUM ARSENIDE TUNNEL DIODES

被引:31
作者
HOLONYAK, N
LESK, IA
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1960年 / 48卷 / 08期
关键词
D O I
10.1109/JRPROC.1960.287545
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1405 / 1409
页数:5
相关论文
共 18 条
[11]  
LONGO TA, 1960, B AM PHYS SOC, V5, P160
[12]  
MILLER SL, 1900, PHYS REV LETT, V4, P60
[13]   OBSERVATION OF DIRECT TUNNELING IN GERMANIUM [J].
MORGAN, JV ;
KANE, EO .
PHYSICAL REVIEW LETTERS, 1959, 3 (10) :466-468
[14]   INFLUENCE OF DEGENERACY ON RECOMBINATION RADIATION IN GERMANIUM [J].
PANKOVE, JI .
PHYSICAL REVIEW LETTERS, 1960, 4 (01) :20-21
[15]  
REID FJ, UNPUB COMMUNICATION
[16]  
SOLTYS T, COMMUNICATION
[17]   TUNNEL DIODES AS HIGH-FREQUENCY DEVICES [J].
SOMMERS, HS .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (07) :1201-1206
[18]  
STKER JJ, 1950, NONLNEAR VIBRATIONS, P133