P-TYPE DOPANTS FOR GAP GREEN LIGHT EMITTING DIODES

被引：12

作者：

LORIMOR, OG

WEINER, ME

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 11期

关键词：

D O I：

10.1149/1.2404045

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1576 / &

共 17 条

[1]

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KAMINSKY, G .

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[4] RADIATIVE AND NONRADIATIVE RECOMBINATION AT NEUTRAL OXYGEN IN P TYPE GAP [J].

DISHMAN, JM .

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[5] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].

GERSHENZON, M ;

LOGAN, RA ;

NELSON, DF .

PHYSICAL REVIEW, 1966, 149 (02) :580-+

[6]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[7]

HARRISON DA, MM71231310

[8] DIFFUSION OF BERYLLIUM INTO GALLIUM-PHOSPHIDE [J].

ILEGEMS, M ;

OMARA, WC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1190-&

[9] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].

LOGAN, RA ;

WHITE, HG ;

WIEGMANN, W .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :55-&

[10]

LORIMOR OG, TO BE PUBLISHED

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