CHARACTERISTICS OF THE OFF-CENTERED APERTURED MIRROR EXTERNAL CAVITY LASER ARRAY

被引：21

作者：

CHANGHASNAIN, CJ

DIENES, A

WHINNERY, JR

STREIFER, W

SCIFRES, DR

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

[2] UNIV CALIF DAVIS,DEPT ELECT ENGN & COMP SCI,DAVIS,CA 95616

[3] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.100956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：484 / 486

页数：3

共 9 条

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[2] HIGH-POWER WITH HIGH-EFFICIENCY IN A NARROW SINGLE-LOBED BEAM FROM A DIODE-LASER ARRAY IN AN EXTERNAL CAVITY [J].

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[3]

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[4] HIGH-ORDER (V-GREATER-THAN-10) EIGENMODES IN 10-STRIPE GAIN-GUIDED DIODE-LASER ARRAYS [J].

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[5] INFLUENCE OF EXTERNAL MIRROR ON ANTIREFLECTION-COATED PHASED-ARRAY SEMICONDUCTOR-LASERS [J].

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[6]

Kapon E., 1984, OPT LETT, V10, P125

[7]

SWANSON EA, 1985, OPT LETT, V12, P30

[8] HIGH-PERFORMANCE INDEX-GUIDED PHASE-LOCKED SEMICONDUCTOR-LASER ARRAYS [J].

TWU, Y ;

CHEN, KL ;

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ELECTRONICS LETTERS, 1985, 21 (08) :324-325

[9] Y-JUNCTION SEMICONDUCTOR-LASER ARRAYS .2. EXPERIMENTS [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :752-756

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