THE RESOLUTION OF ELECTRON-BEAM LITHOGRAPHY

被引：8

作者：

LUTWYCHE, MI

机构：

[1] Cambridge University Engineering Department, Cambridge, CB2 1PZ, Trumpington Street

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90006-D

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a model for the primary interaction of the electron beam with bound electrons in the resist. Time-dependent perturbation theory is used to calculate the probability that sites some distance from the electron beam will be exposed by the electromagnetic field around it. We show that, assuming our approximations to be correct, the range of this interaction is adequate to explain the resolution of P.M.M.A.

引用

页码：17 / 20

页数：4

共 8 条

[1] Broers, J. Electrochem. Soc., 138, 1 number, (1981)
[2] Isaacson, Murray, J. Vac. Sci. Technol., 19, 4, (1981)
[3] Salisbury, Timsit, Berger, Humphreys, Appl. Phys. Letters, 45, 12, (1984)
[4] Kyser, J. Vac. Sci. Technol., 1 B, 4, (1983)
[5] Joy, Beam interactions, contrast and resolution in the SEM, Journal of Microscopy, 136, (1984)
[6] Cowley, Surface Science, 114, (1982)
[7] Bransden, Joachain, Physics of Atoms and Molecules, (1983)
[8] Arzelies, Relativistic Point Dynamics, (1972)

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