BLUE ELECTROLUMINESCENT SRGA2S4-CE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

INOUE, Y

TANAKA, K

OKAMOTO, S

KOBAYASHI, K

FUJIMOTO, I

机构：

[1] NHK Science and Technical Research Laboratories, Setagaya-ku, Tokyo, 157

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 2A期

关键词：

ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; THIOGALLATE; SRGA2S4; SR; GA2S3; CE; THIN FILM; MOLECULAR BEAM EPITAXY;

D O I：

10.1143/JJAP.34.L180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrGa2S4:Ce thin films have been grown by molecular beam epitaxy, using the source materials of Sr metal and Ga2S3. Polycrystalline films are obtained at a growth temperature of 560 degrees C without annealing and their chemical composition ratio of Sr:Ga:S is 1:1.94:3.94. The SrGa2S4:Ce films show pure blue photoluminescence and electroluminescence with the CIE color coordinates of x=0.14 and y=0.13.

引用

页码：L180 / L181

页数：2