STRUCTURAL AND OPTICAL-PROPERTIES OF HIGHLY STRAINED INASXP1-X/INP HETEROSTRUCTURES

被引：13

作者：

SCHNEIDER, RP ^{[1
]}

LI, DX ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 11期

关键词：

D O I：

10.1149/1.2096492

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3490 / 3494

页数：5

共 38 条

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[2] GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M
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[3] ALLOVON M, 1988, ELECTRONIC MATERIAL
[4] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES
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[6] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
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[7] PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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[8] PHOTOLUMINESCENCE BROADENING MECHANISMS IN HIGH-QUALITY GALNAS-ALLNAS QUANTUM WELL STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1142 - 1143
[9] STRUCTURAL AND PHOTOLUMINESCENT PROPERTIES OF GAINAS QUANTUM-WELLS WITH INP BARRIERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 910 - 912
[10] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 121 - 129

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