SYNTHESIS OF N-TYPE SEMICONDUCTING DIAMOND FILM USING DIPHOSPHORUS PENTAOXIDE AS THE DOPING SOURCE

被引：83

作者：

OKANO, K

KIYOTA, H

IWASAKI, T

NAKAMURA, Y

AKIBA, Y

KUROSU, T

IIDA, M

NAKAMURA, T

机构：

[1] Department of Electronics, School of Engineering, Tokai University, 259-12

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 04期

关键词：

68.55; 72.20; 73.60;

D O I：

10.1007/BF00324317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp2 components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor. © 1990 Springer-Verlag.

引用

页码：344 / 346

页数：3

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