CARBIDE CONTAMINATION OF SILICON SURFACES

被引：94

作者：

HENDERSON, RC

MARCUS, RB

POLITO, WJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.1660168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1208 / +

页数：1

共 15 条

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[8] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J].

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[9] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON [J].

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