PHASE SLIP AND THE ORIGIN OF BROAD-BAND NOISE IN NBSE3

被引:3
作者
MAHER, MP
ADELMAN, TL
MCCARTEN, J
DICARLO, D
THORNE, RE
机构
[1] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY
关键词
D O I
10.1016/0379-6779(91)91735-S
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the phase slip process which occurs between regions with different time-averaged charge density wave velocities. Longitudinal phase slip at electrical contacts is temperature activated and requires a minimum voltage V(ps0. We evaluate the characteristic parameters and their dependence on the CDW order parameter DELTA(T). Transverse phase slip, or velocity shear, occurs as a finite size effect associated with irregular crystal cross sections, and is the dominant source of broad band noise in NbSe3.
引用
收藏
页码:4031 / 4034
页数:4
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