LOW-TEMPERATURE OPERATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：2

作者：

MORI, H ^{[1
]}

HATA, K ^{[1
]}

HASHIMOTO, T ^{[1
]}

WU, IW ^{[1
]}

LEWIS, AG ^{[1
]}

KOYANAGI, M ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

POLY-SI TFT; LOW-TEMPERATURE OPERATION; HYDROGENATION TREATMENT; GRAIN BOUNDARY TRAP; KINK EFFECT;

D O I：

10.1143/JJAP.30.3710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of the grain boundary traps on poly-Si TFT (thin-film transistor) device characteristics were evaluated in detail by examining the low-temperature device characteristics. It was found that the absolute value of threshold voltage significantly increases and the field-effect mobility considerably decreases at low temperature because the influences of the grain boundary traps become more pronounced. As a result, the drain current is strikingly reduced specifically in n-channel TFTs when the temperature is decreased. Meanwhile, the kink effect is suppressed at low temperature due to the increased influences of the grain boundary traps. The hydrogenation treatment mitigated the drain current reduction at low temperature and enhanced the kink effect.

引用

页码：3710 / 3714

页数：5

共 5 条

[1] Ikeda S., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P469, DOI 10.1109/IEDM.1990.237066
[2] Koyanagi M., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P863, DOI 10.1109/IEDM.1990.237026
[3] LEWIS AG, 1990, IEDM, P843
[4] TAKENAKA S, 1990, 22ND C SOL STAT DEV, P955
[5] Yamada S., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P859, DOI 10.1109/IEDM.1990.237027

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