ION-INDUCED SECONDARY-ELECTRON EMISSION IN SIH4 GLOW-DISCHARGE, AND TEMPERATURE-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON DEPOSITION RATE

The ion-induced secondary electron emission coefficient gamma from the a-Si:H film deposited from a SiH4 glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH4 pressure and discharge power density, gamma almost-equal-to 0.033 +/- 0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250-degrees-C, when the SiH4 molecular density is kept constant. However, the a-Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH2 radicals arising from SiH dissociation.