IMPROVEMENT IN ELECTRICAL-PROPERTIES OF LASER ANNEALED ION-IMPLANTED GAAS

被引：6

作者：

BADAWI, MH

SEALY, BJ

STEPHENS, KG

AKINTUNDE, JA

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：139 / 143

页数：5

共 15 条

[1]

AUSTON DH, 1979, 1978 P LAS SOL INT L, P11

[2]

BADAWI MH, 1979, ELECTRON LETT, V15

[3]

BARNES PA, 1979, 1978 P LAS SOL INT L, P647

[4] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

CAMPISANO, SU ;

CATALANO, I ;

FOTI, G ;

RIMINI, E ;

EISEN, F ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :485-488

[5] LASER ANNEALING OF CAPPED AND UNCAPPED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

BADAWI, MH ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

ELECTRONICS LETTERS, 1979, 15 (14) :413-414

[6]

LIU SG, 1979, 1978 P LAS SOL INT L, P603

[7] LASER-PULSE ENERGY-DEPENDENCE OF ANNEALING IN ION-IMPLANTED SI AND GAAS SEMICONDUCTORS [J].

RIMINI, E ;

BAERI, P ;

FOTI, G .

PHYSICS LETTERS A, 1978, 65 (02) :153-155

[8]

SEALY BJ, 1978, ELECTRON LETT, V14, P85

[9]

SEALY BJ, 1979, 1978 P LAS SOL INT L, P610

[10] COMPARISON OF SN-ION-IMPLANTED, GE-ION-IMPLANTED, SE-ION-IMPLANTED AND TE-ION-IMPLANTED GAAS [J].

SURRIDGE, RK ;

SEALY, BJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (06) :911-917

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