EXPERIMENTAL-EVIDENCE FOR CHIRAL MELTING OF THE GE(113) AND SI(113) 3X1 SURFACE PHASES

被引：62

作者：

SCHREINER, J

JACOBI, K

SELKE, W

机构：

[1] Fritz-Haber-Institut der Max-Planck-Gesellschaft, D-14195 Berlin

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.49.2706

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of a spot-profile-analysis low-energy-electron-diffraction study of the 3 x 1 order-disorder phase transition of the Ge(113) and Si(113) surfaces are reported. For Ge(113) agreement with predictions for chiral melting with isotropic scaling is found. For Si(113) we compare our findings to those of other LEED and x-ray-scattering studies.

引用

页码：2706 / 2714

页数：9

共 35 条

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