ELECTRICAL TRANSPORT IN AMORPHOUS TEXSE1-X FILMS

被引：19

作者：

MEHRA, RM

AGARWAL, SC

RANI, S

SHYAM, R

AGARWAL, SK

MATHUR, PC

机构：

来源：

THIN SOLID FILMS | 1980年 / 71卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90185-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 77

页数：7

共 16 条

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[2]

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[4]

Fritzsche H, 1974, AMORPHOUS LIQUID SEM, P254

[5] THICKNESS DEPENDENCE OF HOPPING TRANSPORT IN AMORPHOUS-GE FILMS [J].

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POLLAK, M ;

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[6] TRANSPORT PROPERTIES OF TELLURIUM THIN-FILMS AND THEIR DEPENDENCE ON THICKNESS [J].

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[7]

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[8]

LEE JI, 1977, J PHYS E, V10, P161

[9] ELECTRICAL TRANSPORT IN BULK AMORPHOUS SE, SE-TE, SE-SB, AND SE-TE-GE [J].

MEHRA, RM ;

SHYAM, R ;

MATHUR, PC .

PHYSICAL REVIEW B, 1979, 19 (12) :6525-6531

[10] FREQUENCY-DEPENDENCE OF CONDUCTIVITY OF BULK AMORPHOUS SELENIUM AND TELLURIUM-DOPED SELENIUM [J].

MEHRA, RM ;

MATHUR, PC ;

KATHURIA, AK ;

SHYAM, R .

PHYSICAL REVIEW B, 1978, 18 (10) :5620-5624

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