ELECTRODE-REACTION OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN DEIONIZED WATER

被引：24

作者：

HAGIO, M

机构：

[1] Discrete Device Division, Matsushita Electronics Corporation, Nagaokakyo City, Kyoto

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 08期

关键词：

D O I：

10.1149/1.2220832

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The degradation of GaAs metal semiconductor field-effect transistor (MESFET) performance after rinsing for a short time in deionized water is investigated. It is caused by the oxidation of the GaAs surface especially in the periphery of metal electrodes. The mechanism of the rapid surface oxidation is contributed by the electrode reaction between GaAs and electrode metal. Oxygen dissolved in deionized water has a significant effect on the reaction.

引用

页码：2402 / 2405

页数：4