NATIVE POINT-DEFECTS AND NONSTOICHIOMETRY IN GAAS(I) - HOMOGENEITY REGION OF GALLIUM-ARSENIDE

被引：20

作者：

MOROZOV, AN

BUBLIK, VT

MOROZOVA, OY

机构：

来源：

关键词：

D O I：

10.1002/crat.2170210612

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：749 / 754

页数：6

共 23 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

[2]

BUBLIK VT, 1979, KRISTALLOGRAFIYA+, V24, P1230

[3]

BUBLIK VT, 1977, KRISTALLOGRAFIYA+, V22, P1240

[4]

BUBLIK VT, 1973, KRISTALLOGRAFIYA+, V18, P353

[5]

BUBLIK VT, 1980, IZV VUZ FIZ+, P7

BUBLIK, VT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02) :543-548

[7]

BUBLIK VT, 1981, KRISTALLOGRAFIYA+, V26, P554

[8]

BUBLIK VT, 1983, ELEKTRON TEKH 6, P45

[9] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL [J].

CULLIS, AG ;

AUGUSTUS, PD ;

STIRLAND, DJ .

[10]

Dobson P. S., 1979, Gallium Arsenide and Related Compounds 1978, P163