MINIMIZATION OF INTERMODULATION DISTORTION IN GAAS-MESFET SMALL-SIGNAL AMPLIFIERS

被引:33
作者
CROSMUN, AM
MAAS, SA
机构
关键词
D O I
10.1109/22.32225
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1411 / 1417
页数:7
相关论文
共 14 条
[1]  
CROSMUN AM, 1988, THESIS UCLA LOS ANGE
[3]  
FUKAI A, 1987, ATM8782681 AER CORP, P1
[5]  
GUPTA RK, 1978, IEEE T MICROW THEORY, P405
[6]  
HO CY, 1983, MICROWAVE J, V26, P91
[7]   OPTIMIZATION OF 3RD-ORDER INTERMODULATION PRODUCT AND OUTPUT POWER FROM AN X-BAND MESFET AMPLIFIER USING VOLTERRA SERIES ANALYSIS [J].
LAMBRIANOU, GM ;
AITCHISON, CS .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) :1395-1403
[8]  
MAAS SA, 1988, NONLINEAR MICROWAVE
[9]  
MAAS SA, 1988, IEEE T MICROWAVE THE, V37, P1134