SHORT-CHANNEL EFFECT IN FULLY DEPLETED SOI MOSFETS

被引：645

作者：

YOUNG, KK

机构：

[1] Young, K.Konrad

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 02期

关键词：

Band Structure - Semiconducting Silicon - Semiconductor Devices--Computer Simulation;

D O I：

10.1109/16.19942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness.

引用

页码：399 / 402

页数：4

共 7 条

[1] COLINGE JP, 1987, OCT IEEE SOS SOI TEC
[2] KO PK, 1982, THESIS U CALIFORNIA
[3] Sze S.M., 1981, PHYS SEMICONDUCTOR D, P438
[4] ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS
TOYABE, T
ASAI, S
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 375 - 383
[5] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
[6] YOUNG KK, UNPUB IEEE T ELECTR
[7] 1985, PISCES IIB

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