MAGNETORESISTANCE OF SMMN2GE2 - A LAYERED ANTIFERROMAGNET

被引：105

作者：

VANDOVER, RB

GYORGY, EM

CAVA, RJ

KRAJEWSKI, JJ

FELDER, RJ

PECK, WF

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.47.6134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of approximately 100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

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页码：6134 / 6137

页数：4

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