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ACCEPTOR EXCITATION SPECTRA IN P-TYPE ALUMINIUM ANTIMONIDE

被引：1
作者：
AHLBURN, BT
RAMDAS, AK
机构：
[1] Department of Physics, Purdue University, Lafayette, IN
来源：
PHYSICS LETTERS A | 1969年 / A 29卷 / 03期
关键词：
D O I：
10.1016/0375-9601(69)90073-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Photoexcitation lines associated with acceptors in AlSb are observed at liquid helium temperature. The effect of uniaxial stress on these lines is reported. © 1969.
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页码：135 / &
相关论文
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AHLBURN BT, TO BE PULBISHED
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[4]   THE EFFECT OF UNIAXIAL STRESS ON THE EXCITATION SPECTRUM OF A GROUP-III IMPURITY IN GERMANIUM [J].
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SOLID STATE COMMUNICATIONS, 1964, 2 (12) :369-371
[5]   SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].
ONTON, A ;
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PHYSICAL REVIEW, 1967, 163 (03) :686-&
[6]  
WILLARDSON RK, 1966, SEMICONDUCT SEMIMET, V1, P75
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