BAND OFFSETS AND DEEP DEFECT DISTRIBUTION IN HYDROGENATED AMORPHOUS SILICON-CRYSTALLINE SILICON HETEROSTRUCTURES

被引：41

作者：

ESSICK, JM

COHEN, JD

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1232 / 1234

页数：3

共 12 条

[1] THICKNESS DEPENDENT CONDUCTIVITY OF N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].

AST, DG ;

BRODSKY, MH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :611-616

[2] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[3] STUDY OF THE BAND DISCONTINUITIES AT THE A-SIH/C-SI INTERFACE BY INTERNAL PHOTOEMISSION [J].

CUNIOT, M ;

MARFAING, Y .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :987-990

[4]

ESSICK JM, 1988, MATER RES SOC S P, V118, P549

[5] STUDY OF SURFACE-INTERFACE AND BULK DEFECT DENSITY IN A-SI-H BY MEANS OF PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND PHOTOCONDUCTIVITY [J].

FAVRE, M ;

CURTINS, H ;

SHAH, AV .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :731-734

[6] ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES [J].

GELATOS, AV ;

COHEN, JD ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1986, 49 (12) :722-724

[7] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[8]

LEY L, 1985, 17TH P INT C PHYS SE, P811

[9]

MATSUURA H, 1988, MATER RES SOC S P, V118, P647

[10] HOPPING IN EXPONENTIAL BAND TAILS [J].

MONROE, D .

PHYSICAL REVIEW LETTERS, 1985, 54 (02) :146-149

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