FABRICATION AND BARRIER DIAGNOSTICS OF SUPERCONDUCTIVE TUNNEL-JUNCTIONS ON NB-SN AND V-SI

被引：22

作者：

RUDMAN, DA

HOWARD, RE

MOORE, DF

ZUBECK, RB

BEASLEY, MR

机构：

[1] IBM CORP,SAN JOSE,CA 95193

[2] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

[3] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1979年 / 15卷 / 01期

关键词：

D O I：

10.1109/TMAG.1979.1060080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formation on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V3Si. © 1979 IEEE

引用

页码：582 / 584

页数：3

共 10 条

[1] OXIDATION OF LEAD TUNNEL BARRIERS IN A HUMIDITY-CONTROLLED OXYGEN-REGULATED ATMOSPHERE [J].