DESIGN CONSIDERATIONS FOR LOW SIDELOBE MICROSTRIP ARRAYS

被引:76
作者
POZAR, DM
KAUFMAN, B
机构
[1] Department of Electrical and Computer Engineering, University of Massachusetts, Amherst
关键词
D O I
10.1109/8.56953
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The factors affecting the realizable sidelobe performance of microstrip arrays are discussed and quantified. These include excitation amplitude and phase accuracies, mutual coupling, diffraction effects, positioning errors, and errors due to imperfect element matching and feed network isolation. Also, it is shown that low-sidelobe microstrip arrays require a very tight tolerance on the resonant frequencies of the elements, and the elimination of spurious radiation from the feed network. Cross-pol and surface wave effects are also discussed. An experimental 16-element microstrip array prototype incorporated these considerations into its design, and achieved a 35 dB relative sidelobe level. © 1990 IEEE
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页码:1176 / 1185
页数:10
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