IMPROVED AU/N-GAAS SCHOTTKY BARRIERS DUE TO RU SURFACE MODIFICATION

被引：5

作者：

ALI, ST

BOSE, DN

机构：

[1] Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur

来源：

MATERIALS LETTERS | 1991年 / 12卷 / 05期

关键词：

D O I：

10.1016/0167-577X(91)90122-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Au/n-GaAs Schottky diodes were studied before and after Ru surface modification and characterised by current-voltage (I-V) measurements between 108 and 358 K. An increase in barrier height (phi(Bn)) from 0.80 to 0.92 V, decrease in ideality factor (n) from 1.34 to 1.16 and in reverse saturation current density (J0) from 2.1 x 10(-8) to 1.57 x 10(-10) A cm-2 were observed. The values of the effective Richardson constant were also evaluated. Capacitance-voltage (C-V) studies at 303 K showed larger values of phi(Bn) reasons for which are discussed. The effect of Ru modification on the surface of GaAs is considered on the basis of these observations.

引用

页码：388 / 393

页数：6

共 19 条

[1]

ALI ST, UNPUB J PHYS D

[2] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J].