SCHOTTKY BARRIERS AT NISI2/SI(111) INTERFACES

被引：70

作者：

FUJITANI, H ^{[1
]}

ASANO, S ^{[1
]}

机构：

[1] UNIV TOKYO, COLL ARTS & SCI, INST PHYS, MEGURO KU, TOKYO 153, JAPAN

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.42.1696

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structures of the two types of NiSi2/Si(111) interface were studied within the local-density approximation using the linear muffin-tin orbitals method in the atomic-sphere approximation. Calculations were done for four supercell sizes. The largest supercell contained 12 Si2 layers and 11 NiSi2 layers. With each large supercell, the difference between the Schottky-barrier heights (SBH€ ™) of the two types of interface was consistent with experimental values. However, SBH€ ™ depend on the supercell size, although larger supercells have enough layers to screen the interface disturbance. Why SBH€ ™ depend on the cell size is investigated. © 1990 The American Physical Society.

引用

页码：1696 / 1704

页数：9

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