FORMATION OF YBA2CU3O7-Y/BATIO3 MULTISTRUCTURES BY PULSED-LASER DEPOSITION FOR HIGH-TEMPERATURE SUPERCONDUCTING DEVICE APPLICATIONS

被引：20

作者：

HONTSU, S ^{[1
]}

ISHII, J ^{[1
]}

TABATA, H ^{[1
]}

KAWAI, T ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.115167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of YBa2Cu3O7-y(YBCO)/BaTiO3(BTO)//SrTiO3 (STO) (100) and BTO/ YBCO//STO(100) bilayer structures is demonstrated for the construction of a superconductor ferroelectric field transistor. The resulting films of the bilayers have highly c-axis oriented structure. Epitaxial YBCO films formed on the BTO//STO(100) have a zero resistance temperature of 88.9 K. The surface morphology of the epitaxial BTO films on the YBCO//STO is very smooth with a mean surface roughness of 32 Angstrom. Moreover, the Au/BTO/YBCO structures have been fabricated, and the dielectric constant and remanent polarization of BTO layer are obtained to be 180 and 3.5 mu C/cm(2) at 77 K, respectively. (C) 1995 American Institute of Physics.

引用

页码：554 / 556

页数：3

共 7 条

[1]

BAIKOV Y, 1991, APPL PHYS LETT, V59, P2606

[2] METAL-INSULATOR-SUPERCONDUCTOR FIELD-EFFECT-TRANSISTOR USING SRTIO3 YBA2CU3OY HETEROEPITAXIAL FILMS [J].