NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：5

作者：

MAVOR, J

机构：

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1966年 / 113卷 / 09期

关键词：

D O I：

10.1049/piee.1966.0245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1463 / &

共 10 条

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[2]

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[3]

BOZIC SM, 1966, ELECTRON ENG, V38, P40

[4]

DEAL BE, 1965, T METALL SOC AIME, V233, P524

[5]

JORDAN AG, 1965, IEEE T ELECTRON DEVI, VED12, P148

[6] TRANSISTOR NOISE IN CIRCUIT APPLICATIONS [J].

MONTGOMERY, HC .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1461-1471

PETERSON, LC .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1947, 35 (11) :1264-1272

[8] THEORY OF NOISY FOURPOLES [J].

ROTHE, H ;

DAHLKE, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (06) :811-818

[9]

SCHMIDT PF, 1965, T METALL SOC AIME, V233, P517

[10]

SEVIN LJ, 1965, FIELDEFFECT TRANSIST