EFFECTS OF HEAT CLEANING ON PHOTOEMISSION PROPERTIES OF GAAS SURFACES

被引：20

作者：

LIU, YZ

MOLL, JL

SPICER, WE

机构：

[1] Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 09期

关键词：

D O I：

10.1063/1.1652812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heat cleaning in ultrahigh vacuum, when carried out properly on practical GaAs surfaces, has achieved very high quantum efficiency (∼600 μA/lumen) after activation with Cs and O2. This is better than 50% of the best UHV cleaved GaAs. The inherent limitations of heat cleaning are the possibilities of dopant out diffusion and loss of As. Our experiments are consistent with out diffusion of Zn at about 650°C, and a sufficiently small loss of As at this heating temperature so as to result in negligible As vacancies near the surface of the crystal © 1969 The American Institute of Physics.

引用

页码：275 / &