MAGNETIC ANISOTROPY AND MAGNETIC ANNEAL IN SILICON-DOPED YTTRIUM IRON GARNET

被引：21

作者：

TEALE, RW

TEMPLE, DW

WEATHERLEY, DI

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 06期

关键词：

D O I：

10.1088/0022-3719/3/6/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1376 / +

页数：1

共 8 条

[1]

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[5] PHOTOSENSITIVITY OF MAGNETIC ANISOTROPY IN SILICON-DOPED YTTRIUM IRON GARNET [J].

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[6] PHENOMENOLOGICAL CORRELATION OF RELAXATION PHENOMENA IN FERROMAGNETIC RESONANCE AND MAGNETIC ANNEAL [J].

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[7] YTTERBIUM-ION RELAXATION IN FERRIMAGNETIC RESONANCE [J].

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[8] INFRARED SENSITIVE FERRIMAGNETICS [J].

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JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) :1435-&

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