FLUX CREEP IN BI2SR2CACU2O8 EPITAXIAL-FILMS

被引：97

作者：

ZELDOV, E

AMER, NM

KOREN, G

GUPTA, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We incorporate the experimentally deduced flux line potential well structure into the flux creep model. Application of this approach to the resistive transition in Bi2Sr2CaCu2O 8 epitaxial films explains the power law voltage-current characteristics and the nonlinear current dependence of the activation energy. The results cannot be accounted for by a transition into a superconducting vortex-glass phase.

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页码：1700 / 1702

页数：3

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