REACTION-KINETICS OF THE FORMATION OF INDIUM TIN OXIDE-FILMS GROWN BY SPRAY PYROLYSIS

被引：72

作者：

VASU, V

SUBRAHMANYAM, A

机构：

[1] Department of Physics, Indian Institute of Technology, Madras

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90221-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of sprayed indium tin oxide (ITO) films have been reported as function of tin concentration, substrate temperature T(s) and the substrate-nozzle distance D(sn.)D(sn) and T(s) seem to be interrelated for the optimization of good quality ITO films. Highly conducting (3 x 10(5)-OMEGA-1 m-1) and transparent (90% in visible region) ITO films were obtained when D(sn) = 0.3m, T(s) = 693K with 5% by weight of SnCl4 in the starting material. These data are discussed in the light of reaction kinetics.

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页码：696 / 703

页数：8

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