LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION

被引：47

作者：

OHDOMARI, I

TU, KN

SUGURO, K

AKIYAMA, M

KIMURA, I

YONEDA, K

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] KYOTO UNIV,OSAKA,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1015 / 1017

页数：3

共 8 条

[1] LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .2. APPLICATIONS TO SCHOTTKY-BARRIER DIODE ADJUSTMENT AND TO ION-IMPLANTED RESISTORS [J].

CHU, WK ;

SULLIVAN, MJ ;

KU, SM ;

SHATZKES, M .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :7-14

[2] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J].

DAVIES, JA ;

BROWN, F ;

BALL, GC ;

DOMEIJ, B .

CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&

[3]

FAIRFIELD JM, 1969, T METALL SOC AIME, V245, P469

[4] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[5] ION-BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES [J].

OHDOMARI, I ;

TU, KN ;

HAMMER, W .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3) :1-5

[6] INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :75-77

[7] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[8] REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION [J].

WITTMER, M ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5827-5834

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