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VAPOR-PHASE EPITAXY OF CDXHG1-XTE USING ORGANOMETALLICS

被引：27
作者：
MULLIN, JB
IRVINE, SJC
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 09期
关键词：
D O I：
10.1088/0022-3727/14/9/005
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L149 / L151
页数：3
相关论文
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  • [2] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES
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    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 151 - 154
  • [4] MULLIN JB, UNPUBLISHED
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  • [6] HG-CD-TE PHASE-DIAGRAM DETERMINATION BY HIGH-PRESSURE REFLUX
    STEININGER, J
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) : 299 - 320
  • [7] INFLUENCE OF MERCURY-VAPOR PRESSURE ON ISOTHERMAL GROWTH OF HGTE OVER CDTE
    SVOB, L
    MARFAING, Y
    TRIBOULET, R
    BAILLY, F
    COHENSOLAL, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4251 - 4258
  • [8] VOHL P, 1978, J ELECTRON MATER, V7, P759
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