OCCUPATION STATISTICS OF DISLOCATION DEEP LEVELS IN III-V COMPOUNDS

被引：29

作者：

MASUT, R

PENCHINA, CM

FARVACQUE, JL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4964 / 4969

页数：6

共 18 条

[1]

ALEXANDER H, 1978, J PHYS COLL S, V6, P40

[2] EFFECT OF PLASTIC BENDING ON ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE .2. 4-POINT BENDING OF N-TYPE MATERIAL [J].

BELL, RL ;

WILLOUGHBY, AF .

JOURNAL OF MATERIALS SCIENCE, 1970, 5 (03) :198-+

[3] THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS [J].

BROUDY, RM .

ADVANCES IN PHYSICS, 1963, 12 (46) :135-184

[4] HIGH-DENSITY SATURATION EFFECTS OF DISLOCATIONS IN N-TYPE GERMANIUM [J].

CALZECCHI, F ;

GONDI, P ;

MANTOVANI, S .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :82-+

[5] DEEP LEVELS ASSOCIATED TO 60-DEGREES DISLOCATIONS IN SPHALERITE SEMICONDUCTING COMPOUNDS [J].

FARVACQUE, JL ;

FERRE, D .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (01) :33-36

[6]

FARVACQUE JL, 1980, OISO C SERIES I PHYS, V59, P389

[7]

FARVACQUE JL, UNPUB PHYS REV

[8] DISLOCATIONS IN THE DIAMOND LATTICE [J].

HORNSTRA, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141

[9]

LINDHARD J, 1954, MAT FYS MEDD DAN VID, V28, P1

[10] DISLOCATIONS IN PLASTICALLY DEFORMED GERMANIUM [J].

PEARSON, GL ;

READ, WT ;

MORIN, FJ .

PHYSICAL REVIEW, 1954, 93 (04) :666-667

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