A MONTE-CARLO MICROTOPOGRAPHY MODEL FOR INVESTIGATING PLASMA REACTIVE ION ETCH PROFILE EVOLUTION

被引：14

作者：

COTLER, TJ

BARNES, MS

ELTA, ME

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：542 / 550

页数：9

共 25 条

[1] ALLAN KD, 1986, J ELECTROCHEM SOC, V133, P2331
[2] AUCIELLO O, 1984, ION BEAM MODIFICATIO
[3] LARGE-SIGNAL TIME-DOMAIN MODELING OF LOW-PRESSURE RF GLOW-DISCHARGES
BARNES, MS
COLTER, TJ
ELTA, ME
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 81 - 89
[4] BEHRISCH R, 1983, TOPICS APPLIED PHYSI, V52
[5] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P244
[6] PLASMA-ETCHING - DISCUSSION OF MECHANISMS
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403
[7] COTLER TJ, IN PRESS
[8] COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON
EDELSON, D
FLAMM, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) : 1522 - 1531
[9] FLAMM DL, 1979, SOLID STATE TECHNOL, V22, P109
[10] THE REACTION OF FLUORINE-ATOMS WITH SILICON
FLAMM, DL
DONNELLY, VM
MUCHA, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3633 - 3639