SPECTROSCOPIC INVESTIGATION OF THE ELECTRONIC STATES IN NARROW COUPLED GAAS ALAS QUANTUM WELLS WITH INDIRECT BAND-STRUCTURE

被引:6
作者
CINGOLANI, R [1 ]
TAPFER, L [1 ]
ZHANG, YH [1 ]
MURALIDHARAN, R [1 ]
PLOOG, K [1 ]
TEJEDOR, C [1 ]
机构
[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID 34,SPAIN
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 12期
关键词
D O I
10.1103/PhysRevB.40.8319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8319 / 8326
页数:8
相关论文
共 18 条
[1]   BOUND AND VIRTUAL BOUND-STATES IN SEMICONDUCTOR QUANTUM WELLS [J].
BASTARD, G ;
ZIEMELIS, UO ;
DELALANDE, C ;
VOOS, M ;
GOSSARD, AC ;
WIEGMANN, W .
SOLID STATE COMMUNICATIONS, 1984, 49 (07) :671-674
[2]  
BRAY L, 1987, PHYS REV B, V38, P9112
[3]   TRANSFORMATION OF SPATIALLY DIRECT TO SPATIALLY INDIRECT EXCITONS IN COUPLED DOUBLE QUANTUM WELLS [J].
CHARBONNEAU, S ;
THEWALT, MLW ;
KOTELES, ES ;
ELMAN, B .
PHYSICAL REVIEW B, 1988, 38 (09) :6287-6290
[4]   EFFECT OF ELECTRIC-FIELDS ON EXCITONS IN A COUPLED DOUBLE-QUANTUM-WELL STRUCTURE [J].
CHEN, YJ ;
KOTELES, ES ;
ELMAN, BS ;
ARMIENTO, CA .
PHYSICAL REVIEW B, 1987, 36 (08) :4562-4565
[5]   DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1988, 37 (09) :4528-4538
[6]  
CINGOLANI R, IN PRESS PHYS REV B
[7]   PHOTOLUMINESCENCE DECAY TIME STUDIES OF TYPE-II GAAS/ALAS QUANTUM-WELL STRUCTURES [J].
DAWSON, P ;
MOORE, KJ ;
FOXON, CT ;
THOOFT, GW ;
VANHAL, RPM .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3606-3609
[8]   ELECTRON-HOLE LIQUIDS AND BAND-GAP RENORMALIZATION IN SHORT-PERIOD SEMICONDUCTOR SUPERLATTICES [J].
HAWRYLAK, P .
PHYSICAL REVIEW B, 1989, 39 (09) :6264-6267
[9]   LUMINESCENCE PROPERTIES OF (GAAS)L(ALAS)M SUPERLATTICES WITH (I,M) RANGING FROM 1 TO 73 [J].
JIANG, DS ;
KELTING, K ;
ISU, T ;
QUEISSER, HJ ;
PLOOG, K .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :845-852
[10]   DOUBLET STATE OF RESONANTLY COUPLED ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KAWAI, H ;
KANEKO, J ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1263-1269