DEEP LEVELS IN BORON-IMPLANTED GAAS

被引：1

作者：

TOULOUSE, B ^{[1
]}

FAVENNEC, PN ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CPM PMT,F-22301 LANNION,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 04期

关键词：

D O I：

10.1051/rphysap:01980001504086900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：869 / 874

页数：6

共 19 条

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[9] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

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