DIFFERENCES IN EFFECTS OF OXYGEN PARTIAL-PRESSURE ON YBA2CU3O7-X GROWTH BETWEEN INSITU AND EXSITU PROCESSES

被引:3
作者
HASE, T
KITA, R
KAWAGUCHI, K
KOGA, T
MORISHITA, T
机构
[1] Superconductivity Research Laboratory, International Superconductivity Technology Center, Koto-Ku, Tokyo, 135
来源
PHYSICA C | 1993年 / 207卷 / 1-2期
关键词
D O I
10.1016/0921-4534(93)90423-N
中图分类号
O59 [应用物理学];
学科分类号
摘要
The growth conditions of YBa2Cu3O7-x thin films synthesized by in situ and ex situ processes are compared in a phase diagram of oxygen partial pressure p(O2) and temperature. In in situ pulsed laser deposition, as-deposited films cooled down in vacuo show the highest crystallinity in the case of formation at p(O2) which corresponds to that just above a CuO-Cu2O-O2 thermal equilibrium line. In contrast, the crystallinity of films synthesized ex situ from contamination-free Y-Ba-Cu-O precursors is improved by decreasing p(O2) during crystallization down to the YBa2Cu3O6.0 stability line. Such a difference in the optimum conditions is related to the formation of Cu2O.
引用
收藏
页码:58 / 64
页数:7
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