ACCURACY OF 4-PROBE RESISTIVITY MEASUREMENTS ON SILICON

被引：17

作者：

HARGREAVES, JK

MILLARD, D

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1962年 / 13卷 / 05期

关键词：

D O I：

10.1088/0508-3443/13/5/311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：231 / &

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[8]

VALLEY DJ, 1961, ELECTRONICS, V34, P70