GAAS ALGAAS MULTIPLE QUANTUM-WELL GRIN-SCH VERTICAL CAVITY SURFACE EMITTING LASER-DIODES

被引：3

作者：

WANG, YH ^{[1
]}

TAI, K ^{[1
]}

WYNN, JD ^{[1
]}

HONG, M ^{[1
]}

FISCHER, RJ ^{[1
]}

MANNAERTS, JP ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 07期

关键词：

D O I：

10.1109/68.56622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA. © 1990 IEEE

引用

页码：456 / 458

页数：3

共 12 条

[1]

Agrawal G., 1986, LONG WAVELENGTH SEMI

[2]

Corzine S. W., 1989, IEEE Photonics Technology Letters, V1, P52, DOI 10.1109/68.87894

[3]

GEELS RS, 1990, C OPTICAL FIBER COMM

[4] BURIED HETEROSTRUCTURE GAAS/GAALAS DISTRIBUTED BRAGG REFLECTOR SURFACE EMITTING LASER WITH VERY LOW THRESHOLD (5.2 MA) UNDER ROOM-TEMPERATURE CW CONDITIONS [J].