INSITU GROWTH OF BI-SR-CA-CU OXIDE SUPERCONDUCTING THIN-FILMS BY MOLECULAR-BEAM EPITAXY WITH A PURE OZONE SOURCE

被引：10

作者：

KASAI, Y

SAKAI, S

机构：

[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki, 305, 1-1-4, Umezono

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

Bismuth Compounds - Ceramic Materials - Molecular Beam Epitaxy;

D O I：

10.1016/0022-0248(91)90840-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Bi-Sr-Ca-Cu-O superconducting thin films have been grown in situ by molecular beam epitaxy using a new type pure ozone source. The films were deposited layer by layer under low pressure conditions of about 10(-4) Pa. We obtained films with the single phases of both Bi2Sr2CaCu2Ox and Bi2Sr2Ca2Cu3Ox by changing the shuttering sequences. In situ observation of the reflection high-energy electron diffraction showed clear streak patterns during the growth of Bi2Sr2CaCu2Ox films on MgO(100) and LaAlO3(100) substrates, indicating epitaxial growth.

引用

页码：758 / 761

页数：4

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