A Resonant Converter Suitable for 650-V dc Bus Operation

被引：11

作者：

Bhat, Ashoka K. S. ^{[1
]}

机构：

[1] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 2Y2, Canada

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 1991年 / 6卷 / 04期

关键词：

D O I：

10.1109/63.97775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-frequency resonant converter configuration suitable for operation on a 650-V (nominal value) dc bus is described. Selection of the high-frequency switch and an appropriate resonant converter configuration are discussed. It is shown that a series-parallel resonant converter employing insulated gate bipolar transistor (IGBT) gated bipolar/MOSFET cascode switches and operating above resonance is suitable for the present application. A simplified analysis, a simple design procedure, and detailed experimental results are presented.

引用

页码：739 / 748

页数：10

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